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| Excelics PRELIMINARY DATA SHEET EFA120D-SOT89 DC-4GHz 177-183 65-75 SOURCE Low Distortion GaAs Power FET * * * * * * * * Features LOW COST SURFACE-MOUNT PLASTIC PACKAGE +28.0dBm TYPICAL OUTPUT POWER 14.0dB TYPICAL POWER GAIN AT 2GHz 0.7dB TYPICAL NOISE FIGURE AT 2GHz +42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz 0.5 X 2400 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 65-69 160-170 95-100 SOURCE 29-31 59 16-20 14-16 * * Applications Analog and Digital Wireless System HPA (Top View) All Dimensions In Mils ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE NF IP3 Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 2GHz Vds=7V, Ids=180mA Gain at 1dB Compression f = 2GHz Vds=7V, Ids=180mA Power Added Efficiency at 1dB Compression Vds=7V, Ids=180mA f = 2GHz Noise Figure f = 2GHz Vds=5V, Ids=75mA Vds=5-7V, Ids=180mA Output 3rd Order Intercept Point f = 2GHz Vds=5-7V, Ids=180mA Vds=5V, Ids=75mA Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=3mA -11 -7 MIN 26.5 12.0 TYP 28.0 14.0 45 0.7 1.2 42 33 220 140 340 180 -2.0 -15 -14 43* o MAX DRAIN GATE UNIT dBm dB % dB dBm 440 mA mS -3.5 V V V C/W Drain Breakdown Voltage Igd=1.2mA Source Breakdown Voltage Igs=1.2mA Thermal Resistance *Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 30mA 26dBm 175oC -65/175oC 3.2 W 7V -4V 390mA 5mA @ 3dB Compression 150oC -65/150oC 2.7 W CONTINUOUS2 Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com 44 15-25 EFA120D-SOT89 PRELIMINARY DATA SHEET DC-4GHz Low Distortion GaAs Power FET S-PARAMETERS 5V, 75mA FREQ GHz 0.1 0.2 0.3 0.4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 --- S11 --Mag 0.974 0.983 0.969 0.955 0.942 Ang -17.9 -35.1 -51.2 -65.9 -79.0 --- S21 --Mag Ang --- S12 --Mag Ang 60.8 69.6 63.9 54.6 49.7 26.6 20.0 8.9 -0.7 -10.4 -21.5 -33.4 -45.7 -57.4 -67.6 -76.9 --- S22 --Mag 0.101 0.155 0.199 Ang -48.3 -78.1 -94.1 FREQ GHz 0.1 0.2 0.3 0.4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 --- S11 --Mag 0.988 0.990 0.981 0.974 0.958 Ang -18.5 -34.6 -50.5 -65.4 -78.3 Mag 7V, 180mA --- S21 --Ang --- S12 --Mag Ang 83.2 71.4 64.1 56.5 49.6 25.1 18.8 7.5 -2.0 -11.7 -21.9 -33.5 -44.7 -55.7 -65.1 -73.7 --- S22 --Mag 0.191 0.203 0.225 0.251 0.270 Ang -33.8 -52.2 -71.4 -86.8 -98.8 13.178 168.4 0.010 12.865 157.8 0.022 12.209 147.6 0.030 11.496 138.5 0.039 10.720 129.8 0.045 7.356 5.973 4.781 4.029 3.532 3.169 2.812 2.443 2.080 1.769 1.520 97.3 82.1 62.6 45.6 29.1 11.6 -6.5 -24.7 -41.3 -56.1 -70.2 0.063 0.080 0.087 0.095 0.104 0.112 0.118 0.119 0.116 0.110 0.105 13.317 168.2 0.017 12.905 158.0 0.020 12.292 147.9 0.030 11.665 138.3 0.037 10.901 129.7 0.043 7.393 5.984 4.755 4.027 3.515 3.159 2.804 2.430 2.093 1.789 1.556 96.7 81.2 61.3 43.8 26.8 9.3 -9.2 -27.0 -43.6 -59.0 -73.1 0.060 0.075 0.081 0.089 0.095 0.103 0.107 0.109 0.107 0.102 0.099 0.240 -108.2 0.272 -118.3 0.361 -151.1 0.220 -155.8 0.225 -179.9 0.222 0.210 0.202 0.218 0.276 0.356 0.437 0.496 163.7 148.2 127.5 100.6 73.7 54.0 39.0 26.8 0.865 -126.8 0.742 -142.0 0.706 -167.6 0.681 0.657 0.648 0.665 0.704 0.755 0.796 0.826 171.4 151.4 129.1 104.9 81.9 63.3 49.1 36.7 0.867 -127.0 0.772 -142.2 0.712 -167.8 0.688 0.667 0.653 0.673 0.712 0.762 0.802 0.827 169.6 149.4 127.5 102.8 81.5 63.3 48.8 35.5 0.311 -137.9 0.192 -131.4 0.174 -157.6 0.174 -171.2 0.157 0.135 0.135 0.180 0.258 0.347 0.413 172.8 152.4 115.7 75.4 52.4 37.1 27.0 |
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